發(fā)布時間：2018-06-21 19:05

  本文選題：鐵電薄膜 + 光伏效應　； 參考：《西安理工大學》2017年碩士論文

【摘要】：隨著太陽能光伏發(fā)電技術的不斷發(fā)展,Si系、化合物系、鐵電系等各種新型光伏材料不斷被研究開發(fā),成為新能源材料研究領域的熱點之一。其中,鐵電材料具有獨特的反常光生伏打效應,具有較大的開路電壓,展現(xiàn)出獨特的應用優(yōu)勢。但是其光電轉換效率非常有限,成為制約其產業(yè)化應用研究的關鍵技術。本研究針對鐵電光伏材料的光電轉換效率的改善這一問題展開,采用溶膠-凝膠法,以醋酸鉛、乙酰丙酮鋯和鈦酸丁酯等為原料,制備多晶鋯鈦酸鉛Pb(Zr0.4Ti0.6)O3(文中簡稱PZT)鐵電薄膜,結合XRD、光伏性能測試、UV-Vis.吸收譜等性能表征手段對PZT鐵電薄膜進行了相關研究,主要針對以鎳酸鑭(LaNiO3)為底電極的PZT鐵電薄膜和ZnO/PZT復合薄膜的制備,以及極化電場對其光伏特性的改善進行了研究,結果表明:(1)、采用摩爾比為Pb:Zr:Ti=1.1:0.4:0.6的化學計量比制備PZT薄膜,經650℃高溫熱處理2h后,可獲得具有良好光電性能的PZT薄膜,其光電轉換效率可以達到1.13×10-4%。在此基礎上,采用溶膠凝膠法制備ZnO/PZT復合薄膜,其光電轉換效率可以達到3.86×10-3%,相比PZT鐵電薄膜可以提高30倍左右。(2)、采用不同的極化電場對PZT鐵電薄膜進行極化處理,在+10V極化時,PZT鐵電薄膜可獲得最高的光電轉換效率1.17×10-3%,相比未極化狀態(tài)提高10倍左右。(3)、采用不同的極化電場對ZnO/PZT復合薄膜進行極化處理,在+10V極化時,光電轉換效率可以達到1.64×10-2%,相比未極化狀態(tài)提高4倍左右。
[Abstract]:With the development of solar photovoltaic technology, various kinds of new photovoltaic materials, such as Si system, compound system, ferroelectric system and so on, have been researched and developed continuously, which has become one of the hot spots in the field of new energy materials. Among them, ferroelectric materials have unique anomalous photovoltaic effect and large open circuit voltage, showing unique application advantages. However, its photoelectric conversion efficiency is very limited, which has become the key technology that restricts the research of its industrialization application. In order to improve the photoelectric conversion efficiency of ferroelectric photovoltaic materials, the polycrystalline lead zirconate titanate thin films (PZT3) were prepared by sol-gel method using lead acetate, acetylacetone zirconium and butyl titanate as raw materials. Combined with XRD, the photovoltaic properties were tested by UV-Vis. PZT ferroelectric thin films have been studied by means of absorption spectra and other characterization methods. The preparation of PZT ferroelectric thin films and ZnO / PZT composite thin films with LaNiO3) as substrate electrode and the improvement of photovoltaic properties by polarization electric field have been studied. The results showed that the PZT thin films were prepared by the stoichiometric ratio of Pb: Zr: Tiao 1.1: 0.4: 0.6. After heat treatment at 650 鈩，

本文編號：2049700