張應(yīng)變鍺薄膜制備技術(shù)的研究進(jìn)展
發(fā)布時(shí)間：2018-12-15 01:15
【摘要】：由于與硅集成電路工藝兼容的張應(yīng)變鍺薄膜在光電器件如光電探測(cè)器、調(diào)制器,特別是發(fā)光器件中具有潛在的應(yīng)用前景,使其得到了廣泛關(guān)注。然而,在鍺薄膜中引入可控的、大的張應(yīng)變是個(gè)挑戰(zhàn)。綜述了張應(yīng)變鍺薄膜制備技術(shù)的研究進(jìn)展,重點(diǎn)介紹了在鍺薄膜中引入張應(yīng)變的外延技術(shù)、應(yīng)變轉(zhuǎn)移技術(shù)、應(yīng)變濃縮技術(shù)和機(jī)械應(yīng)變技術(shù)的工藝流程和實(shí)驗(yàn)結(jié)果,并討論了它們的優(yōu)點(diǎn)和缺點(diǎn)。采用應(yīng)變濃縮技術(shù)制備的厚度為350 nm的鍺薄膜微橋的單軸張應(yīng)變和微盤的雙軸張應(yīng)變分別達(dá)到了4.9%和1.9%,可將鍺調(diào)制為直接帶隙材料,適用于鍺激光器的研制。
[Abstract]:Due to its potential applications in photoelectric devices, such as photodetectors, modulators, especially luminescent devices, tensioned germanium films compatible with silicon integrated circuit technology have attracted wide attention. However, the introduction of controllable, large tensile strain in germanium films is a challenge. The progress in the preparation of strained germanium thin films is reviewed. The process flow and experimental results of introducing tensile strain into germanium thin films, strain transfer technology, strain concentration technology and mechanical strain technology are introduced emphatically. Their advantages and disadvantages are also discussed. The uniaxial strain and biaxial strain of GE thin film microbridge with thickness of 350 nm and biaxial strain of microdisk prepared by strain concentration technique are up to 4.9% and 1.9%, respectively. Germanium can be modulated as a direct bandgap material, which is suitable for the development of germanium laser.
【作者單位】： 深圳信息職業(yè)技術(shù)學(xué)院電子與通信學(xué)院;
【基金】：廣東省高等學(xué)校優(yōu)秀青年教師項(xiàng)目(Yq2014123)
【分類號(hào)】：TN304.11
本文編號(hào)：2379671
[Abstract]:Due to its potential applications in photoelectric devices, such as photodetectors, modulators, especially luminescent devices, tensioned germanium films compatible with silicon integrated circuit technology have attracted wide attention. However, the introduction of controllable, large tensile strain in germanium films is a challenge. The progress in the preparation of strained germanium thin films is reviewed. The process flow and experimental results of introducing tensile strain into germanium thin films, strain transfer technology, strain concentration technology and mechanical strain technology are introduced emphatically. Their advantages and disadvantages are also discussed. The uniaxial strain and biaxial strain of GE thin film microbridge with thickness of 350 nm and biaxial strain of microdisk prepared by strain concentration technique are up to 4.9% and 1.9%, respectively. Germanium can be modulated as a direct bandgap material, which is suitable for the development of germanium laser.
【作者單位】： 深圳信息職業(yè)技術(shù)學(xué)院電子與通信學(xué)院;
【基金】：廣東省高等學(xué)校優(yōu)秀青年教師項(xiàng)目(Yq2014123)
【分類號(hào)】：TN304.11
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