發(fā)布時(shí)間：2018-12-26 16:56

【摘要】：非制冷紅外焦平面陣列可用于對(duì)紅外目標(biāo)的凝視成像。由于其無(wú)需制冷裝置,因而重量輕、功耗小、成本低,在軍用和民用領(lǐng)域都得到了廣泛應(yīng)用。對(duì)于熱釋電型非制冷紅外焦平面陣列而言,像元間的熱串?dāng)_是制約其性能的重要因素,因而通常需對(duì)其像元進(jìn)行熱隔絕。然而,這會(huì)降低探測(cè)器的填充因子,進(jìn)而導(dǎo)致光能利用率下降。而將微透鏡陣列和探測(cè)器集成則可有效解決這一問(wèn)題,這種方法使用微小透鏡單元將入射到整個(gè)像元上的紅外輻照匯聚到像元中間的光敏區(qū)內(nèi)。總的來(lái)說(shuō),集成微透鏡陣列可顯著提高熱釋電探測(cè)器的靈敏度、信噪比等性能。從上述具體應(yīng)用出發(fā),本論文研究了紅外微透鏡陣列的設(shè)計(jì)和制作。為了得到大F數(shù)、高面形精度紅外微透鏡陣列,本論文對(duì)所用的熱回流、離子束刻蝕制作工藝進(jìn)行了重點(diǎn)研究。具體來(lái)說(shuō),本文主要取得了以下成果:1.明確了熱釋電探測(cè)器上的具體應(yīng)用對(duì)紅外微透鏡陣列的設(shè)計(jì)所提出的要求。2.針對(duì)傳統(tǒng)熱回流法難以制作大F數(shù)微透鏡的問(wèn)題,深入研究了熱回流的理、化機(jī)理和動(dòng)態(tài)過(guò)程。研究發(fā)現(xiàn)光刻膠分子熱交聯(lián)和重力是制約傳統(tǒng)熱回流法獲得大F數(shù)微透鏡的重要因素。在此基礎(chǔ)上,提出二次曝光和倒置熱回流相結(jié)合的方法,該方法可將光刻膠微透鏡的F數(shù)上限由2.4提高至9.7。此外,還可以通過(guò)調(diào)節(jié)二次曝光的劑量對(duì)微透鏡的面形進(jìn)行精確控制。3.為實(shí)現(xiàn)光刻膠微透鏡向硅基底的保形轉(zhuǎn)移,研究了離子束刻蝕過(guò)程中的面形演化機(jī)制以及刻蝕選擇比、刻面效應(yīng)和槽底開(kāi)溝對(duì)圖形轉(zhuǎn)移的影響。在此基礎(chǔ)上,通過(guò)優(yōu)化離子束刻蝕角度消除了刻面效應(yīng)和槽底開(kāi)溝對(duì)微透鏡圖形轉(zhuǎn)移的不利影響。研究發(fā)現(xiàn)當(dāng)離子束以40度角傾斜入射時(shí),可將實(shí)際面形和理想球面的最大誤差控制在0.27微米以內(nèi),并且刻蝕得到的硅微透鏡表面光滑、均勻性良好。
[Abstract]:Uncooled infrared focal plane arrays can be used for staring imaging of infrared targets. Because of its light weight, low power consumption and low cost, it is widely used in military and civil fields. For pyroelectric uncooled infrared focal plane arrays, thermal crosstalk between pixels is an important factor that restricts their performance, so it is usually necessary to thermal insulate their pixels. However, this reduces the fill factor of the detector, which in turn leads to a decrease in the utilization rate of light energy. The integration of microlens array and detector can effectively solve this problem. In this method, the infrared radiation incident to the whole pixel can be converged into Guang Min region in the middle of the pixel by using the micro lens element. In general, integrated microlens arrays can significantly improve the sensitivity, signal-to-noise ratio and other performance of pyroelectric detectors. Based on the above application, the design and fabrication of infrared microlens array are studied in this paper. In order to obtain a large F number and high precision infrared microlens array, the fabrication process of thermal reflux and ion beam etching is studied in this paper. Specifically, the main achievements of this paper are as follows: 1. The requirements for the design of infrared microlens arrays for the specific applications of pyroelectric detectors are clarified. 2. In order to solve the problem that it is difficult to fabricate large F-number microlens by traditional heat reflux method, the mechanism and dynamic process of thermal reflux are studied. It is found that thermal crosslinking and gravity of photoresist molecules are important factors restricting the traditional thermal reflux method to obtain large F-number microlenses. On this basis, a method of combining secondary exposure and inverted heat reflux is proposed, which can increase the upper limit of F number of photoresist microlens from 2.4 to 9.7. In addition, the surface shape of the microlens can be precisely controlled by adjusting the dose of secondary exposure. In order to realize the conformal transfer of photoresist microlens to silicon substrate, the mechanism of surface shape evolution during ion beam etching and the influence of etching selection ratio, etch effect and groove opening on the pattern transfer were studied. On this basis, the negative effects of surface effect and groove opening on the pattern transfer of microlens were eliminated by optimizing the ion beam etching angle. It is found that the maximum error between the real surface and the ideal sphere can be controlled within 0.27 渭 m when the ion beam is tilted at an angle of 40 degrees, and the surface of the etching silicon microlens is smooth and the uniformity is good.
【學(xué)位授予單位】：中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN215

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 孫志君;紅外焦平面陣列技術(shù)的發(fā)展現(xiàn)狀[J];半導(dǎo)體光電;2000年S1期

2 賴建軍,柯才軍,陳四海,易新建;微透鏡陣列的制作及其與圖像傳感器的集成[J];半導(dǎo)體光電;2004年03期

3 何偉;焦斌斌;薛惠瓊;歐毅;陳大鵬;葉甜春;;非制冷紅外焦平面陣列進(jìn)展[J];電子工業(yè)專用設(shè)備;2008年05期

4 杜春雷,邱傳凱,鄧啟凌,潘麗,白臨波,王永茹;微透鏡列陣與紅外探測(cè)器列陣集成芯片的研究[J];光電工程;2003年01期

5 任智斌,盧振武;通過(guò)縮短顯影時(shí)間提高微透鏡陣列的填充因子與F數(shù)[J];光電子·激光;2005年02期

6 崔芳,孫雨南;離子束刻蝕技術(shù)研究[J];光學(xué)技術(shù);1993年05期

7 許喬,楊李茗,舒曉武,楊國(guó)光;擴(kuò)展微透鏡數(shù)值孔徑范圍的階梯光刻熱熔法研究[J];光學(xué)學(xué)報(bào);1998年08期

8 孫艷軍;冷雁冰;陳哲;董連和;;用于紅外焦平面的正方形孔徑球面微透鏡陣列研究[J];光子學(xué)報(bào);2012年04期

9 ;Fabrication of Silicon Microlens Arrays Using Ion Beam Milling[J];Semiconductor Photonics and Technology;1996年01期

10 劉海濤;一種新型非致冷紅外探測(cè)器[J];紅外技術(shù);2005年05期

相關(guān)博士學(xué)位論文 前2條

1 任智斌;折射型微透鏡及微透鏡陣列光學(xué)性質(zhì)與制作技術(shù)的研究[D];中國(guó)科學(xué)院研究生院（長(zhǎng)春光學(xué)精密機(jī)械與物理研究所）;2005年

2 柯才軍;微透鏡陣列的設(shè)計(jì)、制作及與CCD的集成技術(shù)[D];華中科技大學(xué);2005年

相關(guān)碩士學(xué)位論文 前1條

1 郝東亮;熱釋電紅外探測(cè)器的吸收層與輻射調(diào)制、微掃描技術(shù)[D];中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所);2013年

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