發(fā)布時(shí)間：2019-05-17 09:42

【摘要】：集成電路(Integrate Circuit)作為電子產(chǎn)品的主要部件,其主要基底材料—單晶硅片的加工質(zhì)量,在一定程度上影響著電子產(chǎn)品的性能。目前,由于電子產(chǎn)品性能越來(lái)越好,對(duì)IC的集成度也提出了更高的要求,要求硅片的刻蝕線寬越來(lái)越細(xì)、表面平坦度越來(lái)越高。為了降低硅片的制造成本,提高硅片產(chǎn)量,硅片的直徑越來(lái)越大。與之相反,電子產(chǎn)品卻要求芯片向小型化、薄型化方向發(fā)展,這給硅片加工,尤其是拋光加工帶來(lái)了許多亟待解決的問(wèn)題。因此,探索一種提高單晶硅片的加工表面質(zhì)量及材料去除效果的加工方法,顯得尤為突出。超聲振動(dòng)輔助加工由于其拋光力小、材料去除率高、對(duì)材料表面損傷小等優(yōu)點(diǎn),而得到較為廣泛應(yīng)用。鑒于此,本文在傳統(tǒng)的固結(jié)磨�；瘜W(xué)機(jī)械拋光方法的基礎(chǔ)上,引入超聲橢圓振動(dòng)輔助加工技術(shù),并開(kāi)展了加工實(shí)驗(yàn)及仿真分析。其主要內(nèi)容如下:首先,對(duì)硅片拋光技術(shù)及超聲輔助加工原理及進(jìn)行了概述,對(duì)超聲加工中加工工具的橢圓振動(dòng)軌跡進(jìn)行了仿真。其次,對(duì)超聲橢圓振動(dòng)輔助拋光裝置的主要部件及工作原理進(jìn)行了介紹。在此基礎(chǔ)上,對(duì)固結(jié)磨粒拋光片的表面形貌、硅片拋光表面形貌及材料去除分別建立了數(shù)學(xué)建模,并利用MATLAB軟件對(duì)施加超聲振動(dòng)輔助拋光和傳統(tǒng)拋光硅片表面形貌及材料去除效果進(jìn)行對(duì)比分析,得出超聲橢圓振動(dòng)輔助拋光硅片的表面質(zhì)量更優(yōu)、材料去除率更高。最后,研究了硅片拋光壓力對(duì)超聲橢圓振動(dòng)輔助拋光硅片表面質(zhì)量及材料去除效果的影響,并得出了一些理論及工藝規(guī)律。通過(guò)仿真與實(shí)驗(yàn)研究,為實(shí)際加工中提高硅片拋光表面質(zhì)量及材料去除效果提供了一定的,可供參考的理論。
[Abstract]:As the main component of electronic products, the processing quality of single crystal silicon wafer, the main substrate material of integrated circuit (Integrate Circuit), affects the performance of electronic products to a certain extent. At present, as the performance of electronic products is getting better and better, the integration of IC is also put forward, which requires the etched linewidth of silicon wafer to be thinner and the surface flatness higher and higher. In order to reduce the manufacturing cost of silicon wafer and increase the output of silicon wafer, the diameter of silicon wafer is getting larger and larger. On the contrary, electronic products require the development of chips in the direction of miniaturization and thinning, which brings many problems to be solved urgently for silicon wafer processing, especially polishing. Therefore, it is particularly prominent to explore a machining method to improve the surface quality and material removal efficiency of single crystal silicon wafer. Ultrasonic vibration aided machining has been widely used because of its low polishing force, high material removal rate and small surface damage. In view of this, on the basis of the traditional chemical mechanical polishing method of consolidated abrasive particles, ultrasonic elliptical vibration aided machining technology is introduced, and the machining experiment and simulation analysis are carried out. The main contents are as follows: firstly, the polishing technology of silicon wafer and the principle and principle of ultrasonic aided machining are summarized, and the elliptical vibration trajectory of machining tool in ultrasonic machining is simulated. Secondly, the main components and working principle of ultrasonic elliptical vibration assisted polishing device are introduced. On this basis, the mathematical models of the surface morphology, the polishing surface morphology and the material removal of the consolidated abrasive polishing wafer are established respectively. The surface morphology and material removal effect of ultrasonic vibration assisted polishing and traditional polishing silicon wafer are compared and analyzed by MATLAB software. It is concluded that the surface quality of ultrasonic elliptical vibration assisted polishing silicon wafer is better and the material removal rate is higher. Finally, the effect of polishing pressure on the surface quality and material removal efficiency of ultrasonic elliptical vibration assisted polishing silicon wafer was studied, and some theories and technological laws were obtained. Through simulation and experimental research, it provides a certain theory for improving the polishing surface quality and material removal effect of silicon wafer in practical machining.
【學(xué)位授予單位】：江西農(nóng)業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12

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