發(fā)布時間：2020-12-09 19:13

　　A scalable large-signal model of AlGa N/Ga N High electron mobility transistors（HEMTs）suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current（Ids） formulation with a geometry-dependent thermal resistance（Rth） and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance（gm）,which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identi... 

【文章來源】：Chinese Journal of Electronics. 2017年05期 第952-959頁

【文章頁數(shù)】：8 頁

【文章目錄】：
1. Drain-source current
2. Geometry-dependent thermal resistance
3. Trapping effect dispersive model
4. Extrinsic and intrinsic parasitic parameters


【參考文獻】：
期刊論文
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[4]AlGaN/GaN高電子遷移率晶體管解析模型[J]. 楊燕,王平,郝躍,張進城,李培咸.  電子學(xué)報. 2005(02)



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