發(fā)布時間：2018-07-21 08:51

【摘要】：為提高三維存儲器的成品率和減少冗余行列所需的TSVs的數(shù)量,提出每一層存儲塊都與相鄰上下兩層共享冗余的三維存儲器冗余共享結構,并給出了一種新的堆疊方案,將故障較多與較少的芯片交替堆疊.實驗結果表明,該結構在有效控制TSVs數(shù)量增長的前提下,提高了三維存儲器的修復率.
[Abstract]:In order to improve the yield of 3D memory and reduce the number of TSVs needed for redundant columns, a redundant sharing structure of 3D memory is proposed in which each layer of storage blocks share redundancy with adjacent upper and lower layers, and a new stacking scheme is proposed. Alternately stack more faults with fewer chips. The experimental results show that the proposed structure can effectively control the growth of TSVs and improve the repair rate of 3D memory.
【作者單位】： 合肥工業(yè)大學計算機與信息學院;情感計算與先進智能機器安徽省重點實驗室;日本德島大學先端技術科學教育部;
【基金】：國家自然科學基金資助項目(61306049;61204046;61432004;61474035)
【分類號】：TP333
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本文編號：2134992