Fully coupled electrothermal simulation of resistive random
發(fā)布時(shí)間：2021-01-06 15:40
<正>Dear editor,Resistive random access memory （RRAM） is a promising candidate for next generation memory technology [1] and the rapid progress in the threedimensional （3D） integration technology facilitates the design of highly integrated and miniaturized RRAM devices [2]. However, the ever-growing storage density does lead to thermal crosstalk a
【文章來源】：Science China（Information Sciences）. 2020,63(08)
【文章頁數(shù)】：3 頁
【參考文獻(xiàn)】：
期刊論文
[1]3D resistive RAM cell design for high-density storage class memory—a review[J]. Boris HUDEC,Chung-Wei HSU,I-Ting WANG,Wei-Li LAI,Che-Chia CHANG,Taifang WANG,Karol FRHLICH,Chia-Hua HO,Chen-Hsi LIN,Tuo-Hung HOU. Science China（Information Sciences）. 2016(06)
本文編號：2960834
【文章來源】：Science China（Information Sciences）. 2020,63(08)
【文章頁數(shù)】：3 頁
【參考文獻(xiàn)】：
期刊論文
[1]3D resistive RAM cell design for high-density storage class memory—a review[J]. Boris HUDEC,Chung-Wei HSU,I-Ting WANG,Wei-Li LAI,Che-Chia CHANG,Taifang WANG,Karol FRHLICH,Chia-Hua HO,Chen-Hsi LIN,Tuo-Hung HOU. Science China（Information Sciences）. 2016(06)
本文編號：2960834
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