Monte Carlo模擬波型結(jié)構(gòu)的二次電子發(fā)射
發(fā)布時(shí)間：2025-02-06 19:21
二次電子信號(hào)的出射在科學(xué)技術(shù)領(lǐng)域都有著重要的價(jià)值,它作為掃描電子顯微鏡最常用的成像模式,能夠反映電子束轟擊范圍內(nèi)原位的材料以及形貌信息。二次電子極易受到實(shí)驗(yàn)條件以及材料變化的影響,由此可以利用其得到多種實(shí)驗(yàn)可觀測(cè)的襯度,這使得二次電子在更多的領(lǐng)域得到應(yīng)用,例如二次電子產(chǎn)額用于薄膜材料層厚的估計(jì),環(huán)境掃描電子顯微鏡用于生物樣品的觀測(cè)等。二次電子的發(fā)展期待著可以成為更多領(lǐng)域的表征工具,實(shí)現(xiàn)這一目標(biāo)依賴于二次電子產(chǎn)生模型更細(xì)致精確的描述�；谏鲜鲅芯勘尘�,關(guān)注二次電了實(shí)驗(yàn)測(cè)量的發(fā)展,本論文工作包括下幾個(gè)部分:首先介紹了掃描電子顯微鏡的發(fā)展,二次電子成像的實(shí)驗(yàn)觀測(cè),概述了二次電子產(chǎn)生過(guò)程的理論描述以及數(shù)值模擬方法。(第1章)電子在固體中的傳輸和散射過(guò)程形成了各種電子顯微鏡和光譜分析技術(shù)的物理基礎(chǔ)。因此,正確描述電子散射過(guò)程和模擬電子-固體相互作用的相應(yīng)橫截面是至關(guān)重要的。通過(guò)仔細(xì)分析,已經(jīng)合理地描述了兩種類型的電子散射過(guò)程:電子彈性散射通過(guò)使用莫特橫截面來(lái)處理,并且電子非彈性散射被認(rèn)為具有完全的賓夕法尼亞介電函數(shù)。在模擬的意義上,合理的隨機(jī)抽樣和模擬程序是必要的。我們合理地處理了所涉及的物理過(guò)程...
【文章頁(yè)數(shù)】：83 頁(yè)
【學(xué)位級(jí)別】：碩士
【文章目錄】：
摘要
Abstract
Chapter 1 Introduction
1.1 Secondary Electrons in Scanning Electron Microscope
1.1.1 Basic Principle
1.1.2 Experimental Observation of Secondary Electron Generation:
1.2 Simulation of Secondary Electron Emission
1.2.1 Electron Solid Interaction Overview
1.2.2 Secondary Electrons(SE)
1.2.3 Backscattered Electrons(BSE)
1.2.4 Auger Electrons(AE)
1.2.5 Elastic Peak Electrons(PE)
Chapter 2 Monte Carlo Simulation of Secondary Electrons
2.1 Theoretical Basis for Secondary Electron Simulation
2.1.1 Elastic Scattering of Electrons
2.1.2 Inelastic Scattering of Electrons
2.1.3 Secondary Electron Cascade Process
2.2 Stepwise Method of Monte Carlo Simulation
2.2.1 Sampling Methods and Simulation Steps
Chapter 3 Geometric Representation
3.1 Finite Triangular Mesh
3.2 Space Subdivision Method
3.3 Construction of Structure in Gmsh
3.3.1 Geometry Module
3.3.2 Mesh Modules
3.3.3 Solver Module
3.3.4 Post Processing Module
3.4 Geometrical Representation of Wave-type Structure
3.5 Correlation Correction Algorithm
3.4.1 Boundary Correction
Chapter 4 Secondary Electron Emission from Wave-Type Structure
4.1 Numerical calculation of simulation method and parallel computing
4.2 Simulation of SEM Images
4.3 Determining Nano-Meter Line-Width in CD-SEM
4.4 SE Line Profile from Wave-Type Structure
Chapter 5 Summary and Prospects
References
Acknowledgement
Publications
本文編號(hào)：4030790
【文章頁(yè)數(shù)】：83 頁(yè)
【學(xué)位級(jí)別】：碩士
【文章目錄】：
摘要
Abstract
Chapter 1 Introduction
1.1 Secondary Electrons in Scanning Electron Microscope
1.1.1 Basic Principle
1.1.2 Experimental Observation of Secondary Electron Generation:
1.2 Simulation of Secondary Electron Emission
1.2.1 Electron Solid Interaction Overview
1.2.2 Secondary Electrons(SE)
1.2.3 Backscattered Electrons(BSE)
1.2.4 Auger Electrons(AE)
1.2.5 Elastic Peak Electrons(PE)
Chapter 2 Monte Carlo Simulation of Secondary Electrons
2.1 Theoretical Basis for Secondary Electron Simulation
2.1.1 Elastic Scattering of Electrons
2.1.2 Inelastic Scattering of Electrons
2.1.3 Secondary Electron Cascade Process
2.2 Stepwise Method of Monte Carlo Simulation
2.2.1 Sampling Methods and Simulation Steps
Chapter 3 Geometric Representation
3.1 Finite Triangular Mesh
3.2 Space Subdivision Method
3.3 Construction of Structure in Gmsh
3.3.1 Geometry Module
3.3.2 Mesh Modules
3.3.3 Solver Module
3.3.4 Post Processing Module
3.4 Geometrical Representation of Wave-type Structure
3.5 Correlation Correction Algorithm
3.4.1 Boundary Correction
Chapter 4 Secondary Electron Emission from Wave-Type Structure
4.1 Numerical calculation of simulation method and parallel computing
4.2 Simulation of SEM Images
4.3 Determining Nano-Meter Line-Width in CD-SEM
4.4 SE Line Profile from Wave-Type Structure
Chapter 5 Summary and Prospects
References
Acknowledgement
Publications
本文編號(hào)：4030790
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