發(fā)布時(shí)間：2018-10-25 16:40

【摘要】：將自行研制的具有優(yōu)異陷光能力的摻硼氧化鋅用作p-i-n型非晶硅太陽(yáng)電池的前電極,并且將傳統(tǒng)商業(yè)用U型摻氟二氧化錫作為對(duì)比電極.相比表面較為平滑的摻氟二氧化錫,摻硼氧化鋅表面大類金字塔的絨面結(jié)構(gòu)會(huì)在本征層生長(zhǎng)過(guò)程中觸發(fā)陰影效應(yīng),形成大量的高缺陷材料區(qū)和漏電溝道,進(jìn)而惡化電池的開(kāi)路電壓和填充因子.在不修飾摻硼氧化鋅表面形貌的情況下,通過(guò)調(diào)節(jié)非晶硅本征層的沉積溫度來(lái)消弱高絨度表面形貌引起的這種不利影響,對(duì)應(yīng)的電池開(kāi)路電壓和填充因子均出現(xiàn)提升.在僅有鋁背電極的情況下,在本征層厚度為200 nm的情況下,以摻硼氧化鋅為前電極的非晶硅太陽(yáng)電池轉(zhuǎn)換效率達(dá)7.34%(開(kāi)路電壓為0.9 V,填充因子為70.1%,短路電流密度11.7 mA/cm2).
[Abstract]:The prepared zinc oxide doped boron oxide with excellent light trapping ability was used as the front electrode of p-i-n amorphous silicon solar cell and the traditional commercial use of U type doped tin dioxide as contrast electrode. Compared with fluoride-doped tin dioxide with a smoother surface, the flannel structure of the pyramids on the surface of zinc oxide doped with boron will trigger the shadow effect during the growth of the intrinsic layer, resulting in a large number of high defect material areas and leakage channels. In turn, the open circuit voltage and filling factor of the battery are worsened. Without modifying the surface morphology of zinc oxide doped with boron, by adjusting the deposition temperature of the intrinsic layer of amorphous silicon to attenuate the adverse effect caused by the surface morphology of high velvet, the corresponding open circuit voltage and filling factor of the battery are increased. When the thickness of the intrinsic layer is 200 nm, the conversion efficiency of amorphous silicon solar cells with boron doped zinc oxide as the front electrode is 7.34% (open circuit voltage is 0.9 V, filling factor is 70.1, short-circuit current density is 11.7 mA/cm2).
【作者單位】： 南開(kāi)大學(xué)信息科學(xué)與技術(shù)學(xué)院光電子薄膜器件與技術(shù)研究所;
【基金】：國(guó)家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(批準(zhǔn)號(hào):2011CBA00706,2011CBA00707) 國(guó)家自然科學(xué)基金(批準(zhǔn)號(hào):60976051) 國(guó)家高技術(shù)研究發(fā)展計(jì)劃(批準(zhǔn)號(hào):2013AA050302) 天津市科技支撐項(xiàng)目(批準(zhǔn)號(hào):12ZCZDGX03600) 天津市重大科技支撐計(jì)劃項(xiàng)目(批準(zhǔn)號(hào):11TXSYGX22100) 高等學(xué)校博士學(xué)科點(diǎn)專項(xiàng)科研基金(批準(zhǔn)號(hào):20120031110039)資助的課題~~
【分類號(hào)】：TM914.41

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