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基于溫度梯度及統(tǒng)計特性的IGBT模塊失效評估方法研究

發(fā)布時間:2018-08-06 07:51
【摘要】:隨著全球范圍內新能源的快速發(fā)展,能源轉換系統(tǒng)中功率器件的可靠性對電網(wǎng)安全可靠運行的影響日益突出。深入研究功率器件可靠性測試和評估方法,對新能源電力設備及系統(tǒng)的安全評估具有重要意義。溫度特性是IGBT模塊產(chǎn)品設計和可靠性評估中的重要指標,IGBT模塊在不同狀態(tài)下的溫度分布變化規(guī)律,常被用來判定其實際狀態(tài)。根據(jù)矢量分析定義,一個標量場的梯度場能更為直接的反映其變化規(guī)律。因此論文提出了采用溫度梯度及其統(tǒng)計特性的表征功率器件熱力學行為的方法。以IGBT模塊的電-熱-機械應力多物理耦合場模型為基礎,研究其不同運行狀態(tài)下的溫度場及其梯度變化特性,提出了利用模塊溫度梯度及其統(tǒng)計特性來表征IGBT內部失效信息的理論和方法,并建立了IGBT模塊的健康狀態(tài)評估模型。論文以多種典型的IGBT模塊為研究對象,搭建了相應的試驗平臺,利用三維有限元分析、實驗結果驗證了所提出模型和方法的準確性和有效性。論文的創(chuàng)新性工作包括:(1)建立了計及材料溫度敏感性和力學粘塑性的IGBT模塊的電-熱-機械應力多物理場耦合模型,重點研究了多物理場模型的計算和散熱器等效方法,并通過實驗驗證了模型的準確性。分析了IGBT模塊不同失效形式下的溫度分布規(guī)律,結合功率循環(huán)老化實驗結果分析了缺陷造成的溫度集中和應力集中現(xiàn)象,以及焊料層損傷累積過程。(2)根據(jù)IGBT溫度場云圖的溫度連續(xù)分布特性以及其統(tǒng)計特性,提出了采用溫度梯度及其統(tǒng)計特性表征IGBT模塊內部熱力行為的方法。分別對不同運行條件以及不同失效形式的IGBT模塊的溫度梯度以及溫度云圖的統(tǒng)計特性進行了計算分析。結果表明,溫度梯度及其統(tǒng)計特性不僅能夠有效反映模塊熱特性的改變,而且能夠用于模塊內部缺陷檢測。(3)搭建了IGBT模塊溫度特性試驗平臺,開展了不同運行工況和老化條件下的IGBT模塊溫度梯度和溫度概率密度分布規(guī)律的試驗研究,驗證了論文所提出方法的準確性。試驗結果表明與單一的溫度場分析內部狀態(tài)的方法相比,該方法除了具有更高的靈敏度,還能夠有效表征器件整體溫度分布差異。此外,通過分析三相全橋IGBT模塊不同控制策略下的溫度梯度和溫度概率密度變化規(guī)律進一步驗證了方法的準確性和可擴展性。(4)研究了不同運行工作點下IGBT模塊的溫度梯度和溫度概率密度分布規(guī)律,通過對不同運行參數(shù)作用下的模塊溫度特性進行數(shù)值計算,得到了導通電流I,開關頻率fsw和輸出頻率f等參數(shù)對IGBT模塊溫度特性的影響規(guī)律。(5)建立了基于多特征參數(shù)的IGBT模塊健康狀態(tài)綜合評估模型,并利用BP神經(jīng)網(wǎng)絡實現(xiàn)模塊狀態(tài)的準確評估。結果表明該方法總識別準確率達到93%,可為器件檢測提供決策參考;并從熱疲勞累積角度建立了考慮老化進程對熱參數(shù)影響的IGBT模塊的失效率計算模型,計算了IGBT模塊不同時間尺度熱載荷的熱壽命消耗。
[Abstract]:With the rapid development of new energy in the world, the influence of power device reliability on the safe and reliable operation of power grid is becoming increasingly prominent. It is of great significance to study the reliability test and evaluation method of power devices, and it is of great significance to the safety assessment of new energy power equipment and system. The temperature characteristic is the design of IGBT module product And the important index of reliability evaluation, the variation of the temperature distribution of the IGBT module in different states is often used to determine its actual state. According to the definition of vector analysis, the gradient field of a scalar field can reflect the law of change more directly. Therefore, the paper presents the power devices using the temperature gradient and its statistical characteristics. The method of thermodynamic behavior. Based on the multi physical coupled field model of IGBT module, the temperature field and its gradient characteristics under different operating conditions are studied. The theory and method of using the temperature gradient of the module and its statistical properties to characterize the internal failure information of IGBT are proposed, and the health of the IGBT module is established. The thesis takes a variety of typical IGBT modules as the research object, builds the corresponding test platform, and uses three-dimensional finite element analysis. The experimental results verify the accuracy and effectiveness of the proposed model and method. The innovative work of the paper includes: (1) the IGBT module which takes into account the temperature sensitivity of the material and the mechanical viscoplasticity is established. The multi physical field coupling model of electric thermal mechanical stress is studied. The calculation of multi physical field model and the equivalent method of radiator are emphatically studied. The accuracy of the model is verified by experiments. The temperature distribution law of the IGBT module under different failure forms is analyzed. The temperature concentration and stress caused by the defect are analyzed by the experimental results of the power cycle aging. Concentration phenomenon and the cumulative damage accumulation process of solder layer. (2) according to the temperature continuous distribution characteristics of IGBT temperature field and its statistical characteristics, a method of using temperature gradient and its statistical characteristics to characterize the internal thermal behavior of the IGBT module is proposed. The temperature gradient of the IGBT modules with different operating conditions and different failure forms, respectively, is presented. The statistical characteristics of the temperature cloud are calculated and analyzed. The results show that the temperature gradient and its statistical characteristics can not only reflect the change of the thermal characteristics of the module, but also can be used to detect the internal defect of the module. (3) the temperature characteristic test platform of the IGBT module is built, and the IGBT module temperature ladder is carried out in different operating conditions and aging conditions. The experimental results of the probability density distribution of the degree and temperature verify the accuracy of the proposed method. The experimental results show that the method can also effectively characterize the whole temperature distribution difference of the device, in addition to a single temperature field analysis method. In addition, the three phase full bridge IGBT mode is analyzed. The variation of temperature gradient and temperature probability density under different control strategies further validates the accuracy and extensibility of the method. (4) the distribution of temperature gradient and temperature probability density distribution of IGBT modules at different operating points is studied, and the numerical calculation is obtained by the numerical calculation of the temperature characteristics of the modules under different operating parameters. The influence of the parameters such as the conduction current I, the switching frequency FSW and the output frequency f on the temperature characteristics of the IGBT module. (5) a comprehensive assessment model of the health state of the IGBT module based on the multiple characteristic parameters is established, and the accurate evaluation of the module state is realized by the BP neural network. The results show that the total recognition accuracy of the method is up to 93%, and it can be used for the device detection. The decision reference is provided, and the calculation model of the failure rate of the IGBT module, which considers the effect of aging process on the thermal parameters, is established from the point of thermal fatigue accumulation, and the thermal life consumption of the IGBT module at different time scales is calculated.
【學位授予單位】:重慶大學
【學位級別】:博士
【學位授予年份】:2016
【分類號】:TN322.8
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本文編號:2167015

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