發(fā)布時(shí)間：2018-01-19 23:50

  本文關(guān)鍵詞： 半導(dǎo)體激光 Nd:YAG激光 輕型復(fù)發(fā)性阿弗他潰瘍 臨床療效　出處：《安徽醫(yī)科大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：目的本實(shí)驗(yàn)通過(guò)臨床病例,實(shí)驗(yàn)一對(duì)比半導(dǎo)體激光與復(fù)方氯己定含漱液治療輕型復(fù)發(fā)性阿弗他潰瘍(minor recurrent aphthous ulcer,Mi RAU)的療效,并探討同一波長(zhǎng)不同功率激光與其療效的關(guān)系,以選出治療Mi RAU的有效最適劑量,為激光治療Mi RAU提供依據(jù);實(shí)驗(yàn)二比較波長(zhǎng)1064 nm Nd:YAG激光和波長(zhǎng)810 nm半導(dǎo)體激光治療Mi RAU的療效,以選出治療Mi RAU的有效最優(yōu)激光。方法實(shí)驗(yàn)一:2015年3月~2016年11月,選擇臨床確診的90例Mi RAU患者,隨機(jī)分成3組,每組30例。實(shí)驗(yàn)組分別采用波長(zhǎng)810 nm,頻率300mw和波長(zhǎng)810nm,頻率500mw半導(dǎo)體激光局部照射Mi RAU,對(duì)照組采用復(fù)方氯己定含漱液治療Mi RAU,比較3組治療前后患者的疼痛緩解率、潰瘍愈合時(shí)間、潰瘍面積及療效有效率。實(shí)驗(yàn)二:2015年3月~2016年11月,選擇口腔黏膜上有2個(gè)散在Mi RAU的患者50例,共計(jì)100個(gè)潰瘍。每個(gè)潰瘍隨機(jī)分為波長(zhǎng)1064 nm Nd:YAG激光治療組和波長(zhǎng)810nm半導(dǎo)體激光治療組,進(jìn)行連續(xù)3d局部激光治療。分別在第1、2、3天治療后即刻和第4天隨訪時(shí)記錄患者的疼痛指數(shù),比較潰瘍的愈合狀況,記錄最終愈合時(shí)間。結(jié)果實(shí)驗(yàn)一:激光治療組和對(duì)照組治療前后比較,激光治療組的疼痛緩解率高于對(duì)照組,潰瘍愈合時(shí)間和面積均少于對(duì)照組,比較差異具有統(tǒng)計(jì)學(xué)意義(P0.05);波長(zhǎng)810nm,頻率300mw激光治療組緩解疼痛效果優(yōu)于波長(zhǎng)810nm,頻率500mw組和對(duì)照組。激光治療組總有效率優(yōu)于對(duì)照組(P0.05),波長(zhǎng)810nm,頻率300mw和波長(zhǎng)810nm,頻率500mw組差異無(wú)統(tǒng)計(jì)學(xué)意義(P0.05)。實(shí)驗(yàn)二:波長(zhǎng)1064 nm Nd:YAG激光治療組和波長(zhǎng)810nm半導(dǎo)體激光治療組在治療第1、2及第4天隨訪時(shí)疼痛指數(shù)差異無(wú)統(tǒng)計(jì)學(xué)意義(P0.05),第3天時(shí)兩組之間的差異具有統(tǒng)計(jì)學(xué)意義(P0.05);2組愈合時(shí)間差異無(wú)統(tǒng)計(jì)學(xué)意義(P0.05)。結(jié)論實(shí)驗(yàn)一:半導(dǎo)體激光能有效緩解Mi RAU所產(chǎn)生的疼痛感并且作用持久,能顯著縮短潰瘍愈合的時(shí)間。波長(zhǎng)為810 nm條件下,功率300 mw,功率密度為1.53 W/CM2的半導(dǎo)體激光的緩解疼痛效果最優(yōu)。實(shí)驗(yàn)二:Nd:YAG激光和半導(dǎo)體激光低能量照射治療Mi RAU療效相同,均充分利用了激光的生物刺激作用、熱效應(yīng),能減輕患者疼痛、促進(jìn)潰瘍愈合,顯著提高療效。
[Abstract]:Objective this experiment passes the clinical case. Experiment 1 compared semiconductor laser with compound chlorhexidine gargle in the treatment of minor recurrent aphthous ulcer of mild recurrent aphthous ulcer. The effect of Mi RAU) and the relationship between the different power laser of the same wavelength and its curative effect were discussed in order to select the optimal dosage for the treatment of Mi RAU and to provide the basis for laser treatment of Mi RAU. The second experiment was to compare the efficacy of 1064nm Nd:YAG laser and 810nm semiconductor laser in the treatment of Mi RAU. Methods: from March 2015 to November 2016, 90 patients with Mi RAU were randomly divided into 3 groups. There were 30 cases in each group. The experimental group received local irradiation of Mi RAU with wavelength 810nm, frequency 300MW and wavelength 810nm, frequency 500MW semiconductor laser. The control group was treated with compound chlorhexidine gargle. The pain relief rate and ulcer healing time were compared before and after treatment. The area of ulcer and the effective rate. Experiment 2: from March 2015 to November 2016, 50 patients with Mi RAU were selected from oral mucosa. A total of 100 ulcers were randomly divided into two groups: wavelength 1064nm Nd:YAG laser treatment group and wavelength 810nm semiconductor laser treatment group. The pain index of the patients was recorded immediately after 3 days of treatment and 4 days after the treatment, and the healing status of the ulcer was compared. Results: compared with the control group, the pain relief rate of laser treatment group was higher than that of control group, and the healing time and area of ulcer in laser treatment group were lower than that in control group. The difference was statistically significant (P 0.05). The pain relief effect of the 300MW laser treatment group was better than that of the wavelength 810nm. The total effective rate in the laser treatment group was better than that in the control group (P 0.05), the wavelength was 810 nm, the frequency was 300 MW and the wavelength was 810 nm. There was no significant difference in frequency 500MW group (P0.05). Experiment 2: wavelength 1064nm Nd:YAG laser treatment group and wavelength 810nm semiconductor laser treatment group in the first treatment. There was no significant difference in pain index between the two groups at 2 and 4 days follow-up, but the difference between the two groups on the third day was statistically significant. There was no significant difference in healing time between the two groups (P 0.05). Conclusion experiment 1: semiconductor laser can effectively relieve the pain caused by Mi RAU and the effect is lasting. The healing time of ulcers was significantly shortened, and the power was 300 MW at 810 nm. The pain relief effect of semiconductor laser with power density of 1.53 W / CM2 was the best. Experiment 2: ND: YAG laser and semiconductor laser low energy irradiation had the same effect on Mi RAU. All of them make full use of the biological stimulation and heat effect of laser, which can relieve the pain of the patients, promote the healing of ulcers, and improve the curative effect significantly.
【學(xué)位授予單位】：安徽醫(yī)科大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：R781.5

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本文編號(hào)：1445992